Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps
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DOI: 10.1007/s13391-021-00307-7
文献链接: https://link.springer.com/10.1007/s13391-021-00307-7
其他信息:
出版社: Springer Science and Business Media LLC
作者: Se-Na Choi; Sung-Min Yoon
全文下载地址: https://link.springer.com/content/pdf/10.1007/s13391-021-00307-7.pdf
