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High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters复制

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DOI: 10.1039/D4TC01843E复制

文献链接: https://xlink.rsc.org/?DOI=D4TC01843E复制

其他信息:

出版社: Royal Society of Chemistry (RSC)
作者: Sang-Joon Park; Se-Ryong Park; Woo-Seok Jeon; Jong Mu Na; Jun Hyung Lim; Sukhun Ham; Yung-Bin Chung; Tae-Jun Ha

上一篇：Interfacial Oxygen Coordination Controlled by Mo, Cu, and Cr Electrodes in ALD-Grown IGZO Thin-Film Transistors

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