当前位置：首页 > 文献互助 > 互助详情

2-Mercaptoacetamidine and derivatives as antiradiation agents复制

用户osh8HKXtXgBg 4天前 21 10 已完结

1. 当前求助状态已完结, 请及时下载应助文件

2. 系统将在 2026-02-05 09:24:32 删除文件

注: 所有应助的资源仅供学习交流使用, 不得违反相关法律法规

DOI: 10.1021/jm00282a027复制

文献链接: https://pubs.acs.org/doi/abs/10.1021/jm00282a027复制

其他信息:

出版社: American Chemical Society (ACS)
作者: Roger D. Westland; Mary M. Merz; Susan M. Alexander; Linda S. Newton; Ludwig Bauer; Terry T. Conway; Jerry M. Barton; Krishan K. Khullar; Prabhakar B. Devdhar; Marie M. Grenan

上一篇：Concise Synthesis of Deoxylimonin

下一篇：Adamantyl Side Chains as Anti‐Aggregating Moieties in Dyes for Dye‐Sensitized Solar Cells

互助时间线

2026-01-29 09:25:55 [完结求助]

楼主确认了用户q1D5SItFo0Mm应助的文件是正确的, 求助状态变成 已完结

2026-01-29 09:24:32 [上传文件]

用户q1D5SItFo0Mm上传了文件(pdf 1.03 MB), 求助状态变成 待确认

2026-01-29 09:24:26 [发起求助]

最新发布的求助

How to read radiographs according to the Sharp/van der Heijde method 2小时前
How a Rotten Apple May Spoil the Barrel: Corporate Fraud Detection via Dynamic Business Networks 2小时前
Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method 2小时前
Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method 2小时前
How a Rotten Apple May Spoil the Barrel: Corporate Fraud Detection via Dynamic Business Networks 2小时前
Attaining quantitatively fewer defects in close-packed InGaZnO synthesized using atomic layer deposition 2小时前
Impact of Annealing Temperature on Atomic Layer Deposited In–Ga–Zn–O Thin-Film Transistors 2小时前
Controllable Threshold Voltage (Vth) Drift in Ovonic Threshold Switch Devices Under a High-Frequency Continuous Operation 2小时前
Performance Enhancement of Self-Aligned Coplanar TFTs With ALD-IGZO Channels via Effective Doping From Interlayer Dielectric 3小时前
https://pubs.acs.org/doi/10.1021/acsami.4c22748 3小时前
In-Cycle Helium Plasma Integrated Atomic Layer Deposition Process for Screening Effect Alleviation and Performance Enhancement in a-IGZO TFTs 3小时前
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices 3小时前

wispass工作室 Copyright © 蜀ICP备2024051606号-2 www.wispass.com