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Optimizing SiN Composition for Enhanced Charge-Trapping in Next-Generation 3D NAND Flash Memories复制

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T Nagahashi, H Karasawa, R Horiike…
2025 9th IEEE …, 2025
ieeexplore.ieee.org
… This study investigates the optimization of charge-trap silicon nitride (CT-SiN) for 3D NAND
flash … This study paves the way for significantly improved performance of CT-SiN in future 3D …

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