Heterogeneous Integration of β-Ga2O3 and Polycrystalline Diamond via SiC and SiO2 Interlayers with Optimized Adhesion and Thermal Boundary Resistance for …
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J Keshtkar, M Ťapajna, M Varga, DK Sharma, O Szabó…
Carbon, 2026
Elsevier
Efficient thermal management is critical for reliable ultrawide-bandgap β-Ga 2 O 3 devices, as their intrinsically low thermal conductivity limits high-power operation. Integration with diamond, a material with exceptional thermal conductivity, provides a promising pathway for heat dissipation; however, achieving high-quality β-Ga 2 O 3/diamond interfaces remains challenging due to thermal expansion and lattice mismatches, as well as β-Ga 2 O 3 degradation during harsh-environment and high-temperature diamond growth. In this work …
