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Operation Scheme Optimizations to Achieve Ultrahigh Endurance (1010) in Flash Memory复制

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DOI: 10.1109/TED.2024.3405400复制

文献链接: https://ieeexplore.ieee.org/document/10682780/复制

其他信息:

出版社: Institute of Electrical and Electronics Engineers (IEEE)
作者: Yang Feng; Xinyi Guo; Chengcheng Wang; Yueran Qi; Junyu Zhang; Jing Liu; Xuepeng Zhan; Jixuan Wu; Jiezhi Chen

上一篇：Trends and Future Challenges of 3D NAND Flash Memory

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