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期刊论文High-Performance Vertical Channel-All-Around Nanosheet Transistors With InGaZnO Channel and Sub-10 nm Channel Length复制

用户NryHlAVH_iBM 1个月前 79 已关闭

DOI: 10.1109/LED.2023.3348655复制

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上一篇：High-Performance Vertical Channel-All-Around Nanosheet Transistors With InGaZnO Channel and Sub-10 nm Channel Length

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