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Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility复制

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DOI: 10.1021/acsami.3c06517复制

文献链接: https://pubs.acs.org/doi/10.1021/acsami.3c06517复制

其他信息:

出版社: American Chemical Society (ACS)
作者: Dong-Gyu Kim; Won-Bum Lee; Seunghee Lee; Jihyun Koh; Bongjin Kuh; Jin-Seong Park
全文下载地址: https://pubs.acs.org/doi/pdf/10.1021/acsami.3c06517

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