Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility
用户NryHlAVH_iBM
1个月前
89
10
已完结
1. 系统已在2026-05-21 15:29:46对应助文件进行删除
2. 如有需要请重新发布求助信息
注: 所有应助的资源仅供学习交流使用, 不得违反相关法律法规
文献链接: https://pubs.acs.org/doi/10.1021/acsami.3c06517
其他信息:
出版社: American Chemical Society (ACS)
作者: Dong-Gyu Kim; Won-Bum Lee; Seunghee Lee; Jihyun Koh; Bongjin Kuh; Jin-Seong Park
全文下载地址: https://pubs.acs.org/doi/pdf/10.1021/acsami.3c06517

