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Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control复制

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DOI: 10.1038/s41598-025-25938-w复制

文献链接: https://www.nature.com/articles/s41598-025-25938-w复制

其他信息:

出版社: Springer Science and Business Media LLC
作者: Hanseok Jeong; Soo Min Yoo; Minki Choe; In-Hwan Baek; Woojin Jeon
全文下载地址: https://www.nature.com/articles/s41598-025-25938-w.pdf

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