Behavior of Boron Implanted into n-Si (100) by Low-Energy (2 keV) Ion Implantation for a Shallow Junction
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DOI: 10.3938/jkps.52.1237
文献链接: http://www.jkps.or.kr/journal/DOIx.php?id=10.3938/jkps.52.1237
其他信息:
出版社: Korean Physical Society
作者: Sa-Kyun Rha; Youn-Seoung Lee; Won-Jun Lee; Min-Seok Jeon; Jun-Kwang Song; Myeung Hee Lee

