当前位置：首页 > 文献互助 > 互助详情

期刊论文Behavior of Boron Implanted into n-Si (100) by Low-Energy (2 keV) Ion Implantation for a Shallow Junction复制

用户ydeigrG4DijY 4天前 34 求助中帖子自动结束时间: 2025-10-04 11:48:35

1. 文件大小不能超过300M, 允许上传文档或压缩包等

2. 请确保上传文献的真实性、完整性，不得对原文做任何修改

注: 所有应助的资源仅供学习交流使用, 不得违反相关法律法规

其他信息:

出版社: Korean Physical Society
作者: Sa-Kyun Rha; Youn-Seoung Lee; Won-Jun Lee; Min-Seok Jeon; Jun-Kwang Song; Myeung Hee Lee

互助时间线

In vivo chimeric antigen receptor (CAR)-T cell therapy 6小时前

β-Fluorovinylsulfonamide as a Highly Reactivity- and Structure-Tunable Electrophile for Covalent Targeting of Proteins 9小时前

Crystal structures of three centrosymmetric TbIII complexes. Structural model for triboluminescence 11小时前

Chikungunya virus and other emerging arthritogenic alphaviruses 12小时前

ATP-dependent remodeling of chromatin condensates reveals distinct mesoscale outcomes 13小时前

Enzyme-mimicking catalytic activities and biomedical applications of bimetallic nanozymes 13小时前

Biomimetic Dual-Coordination-Sphere Porphyrin-Based Covalent Organic Frameworks Enable Efficient and Selective Furfural Oxidation 14小时前

Synthesis of artificial humus by hydrothermal carbonization and application to improve soil quality: a review 16小时前

Targeting the Mitochondrial Protease ClpP for Anticancer Therapy 20小时前