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Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition复制

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DOI: 10.1021/acsaelm.1c00689复制

文献链接: https://pubs.acs.org/doi/10.1021/acsaelm.1c00689复制

其他信息:

出版社: American Chemical Society (ACS)
作者: Seo-Hyun Moon; Soo-Hyun Bae; Young Ha Kwon; Nak-Jin Seong; Jong-Heon Yang; Yong-Hae Kim; Kyu-Jeong Choi; Chi-Sun Hwang; Sung-Min Yoon

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