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Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition复制

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DOI: 10.1039/c9tc01164a复制

文献链接: https://xlink.rsc.org/?DOI=C9TC01164A复制

其他信息:

出版社: Royal Society of Chemistry (RSC)
作者: Seung-Bo Ko; Nak-Jin Seong; Kyujeong Choi; So-Jung Yoon; Se-Na Choi; Sung-Min Yoon

上一篇：Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

下一篇：Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

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