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Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials复制

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DOI: 10.1021/acsaelm.2c01342复制

文献链接: https://pubs.acs.org/doi/10.1021/acsaelm.2c01342复制

其他信息:

出版社: American Chemical Society (ACS)
作者: Dong-Hee Lee; Young-Ha Kwon; Nak-Jin Seong; Kyu-Jeong Choi; Gyungtae Kim; Sung-Min Yoon
全文下载地址: https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01342

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