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期刊论文High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors复制

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DOI: 10.1109/ted.2024.3359582复制

文献链接: https://ieeexplore.ieee.org/document/10423607/复制

其他信息:

出版社: Institute of Electrical and Electronics Engineers (IEEE)
作者: Zihui Chen; Jun Yang; Xingwei Ding; Xifeng Li; Jianhua Zhang

上一篇：Approach to High-Performance Indium Gallium Zinc Oxide Transistors by Thermal Atomic Layer Deposition

下一篇：Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

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