Accurate evaluation of effective mobility in Si MOSFETs at cryogenic temperatures using the quasi-static C–V method
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DOI: 10.35848/1347-4065/adb4fa
文献链接: https://iopscience.iop.org/article/10.35848/1347-4065/adb4fa
其他信息:
出版社: IOP Publishing
作者: Yutong Chen; Zhao Jin; Xueyang Han; Hiroshi Oka; Takahiro Mori; Kasidit Toprasertpong; Mitsuru Takenaka; Shinichi Takagi
全文下载地址: https://iopscience.iop.org/article/10.35848/1347-4065/adb4fa/pdf

